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PDF 2SC3938G Data sheet ( Hoja de datos )
| Número de pieza | 2SC3938G | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3938G
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCES
VEBO
IC
ICP
PC
Tj
Tstg
40
40
5
100
300
150
150
−55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
■ Package
• Code
SMini3-F2
• Marking Symbol: 2Y
• Pin Name
1. Base
2. Emitter
3. Collector
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
VCB = 40 V, IE = 0
VEB = 4 V, IC = 0
VCE = 1 V, IC = 10 mA
IC = 10 mA, IB = 1 mA
IC = 10 mA, IB = 1 mA
VCB = 10 V, IE = −10 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
60
0.1
0.1
200
0.17 0.25
1
450
26
µA
µA
V
V
MHz
pF
Turn-on time
Turn-off time
Storage time
ton Refer to the measurement circuit
toff
tstg
17 ns
17 ns
10 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
60 to 120
90 to 200
Publication date: April 2007
SJC00364AED
1
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1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC3938G.PDF ] | |
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