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PDF 2SC3838 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3838 | |
| Descripción | NPN Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SC3838
50 mA, 20 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
z High transition frequency
z Small rbb’·Cc and high gain
z Small NF
PACKAGE INFORMATION
Weight: 0.0078g (Approximately)
1
Base
Collector
3
2
Emitter
SOT-23
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
MARKING
AD
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.00
2.25 2.55
1.20 1.40
0.90 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
0.5 REF.
0.95 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
TJ, TSTG
Ratings
20
11
3
50
100
+150, -55 ~ +150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-Base Breakdown Voltage
V(BR)CBO
20
-
-
V IC=10μA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
11
-
-
V IC= 1mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
3
-
- V IE=10μA, IC=0
Collector Cut-Off Current
ICBO - - 0.5 μA VCB=10V, IE=0
Emitter Cut-Off Current
IEBO - - 0.5 μA VEB= 2V, IC=0
Collector-Emitter Saturation Voltage
VCE(sat)
-
- 500 mV IC=-10mA, IB= 5mA
DC Current Gain
hFE 56 - 180
VCE= 10V, IC=5mA
Transition Frequency
fT
1.4 -
- GHz VCE=10V, IC= 10mA, f = 500MHz
Output Capacitance
Cob - - 1.5 pF VCB=10V, IE=0A, f=1MHz
Collector-Base Time Constant
rbb’·Cc - - 12 pS IC=10mA,VCB=10V, f=31.8MHz
Noise Figure
F - 3.5 - dB VCE=6V, IC= 2mA, f = 500MHz, Rs = 50Ω
CLASSIFICATION OF hFE
Rank
Range
N
56 - 120
P
82 - 180
01-June-2005 Rev. A
Page 1 of 3
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