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PDF 2SC3585 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3585 | |
| Descripción | NPN Silicon Epitaxial Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
NPN Silicon Epitaxial Transistor
Features
NF 1.8 dB TYP. @f = 2.0 GHz
Ga 9 dB TYP. @f = 2.0 GHz
2SC3585
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
20
10
1.5
35
200
150
-65 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO VCB = 10 V, IE = 0
Emitter cutoff current
IEBO VEB = 1V, IC = 0
DC current gain
hFE*1 VCE = 6 V, IC =10 mA
Gain Bandwidth Product
fT VCE = 6 V, IC = 10 mA
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Cre *2 VCB = 10 V, IE = 0, f = 1.0 MHz
|S21e|2 VCE = 6 V, IC = 10 mA, f = 2.0 GHz
MAG VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Noise Figure
NF VCE = 6 V, IC = 5 mA, f = 2.0 GHz
*1. Pulse Measurement PW 350ìs, Duty Cycle 2 %
Min Typ Max Unit
1.0 ìA
1.0 ìA
50 100 250
10 GHz
0.3 0.8 pF
6.0 8.0
dB
10 dB
1.8 3.0 dB
*2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Marking
Rank
hFE
R43
R43/Q
50 100
R44
R44/R
80 160
R45
R45/S
125 250
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