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PDF 2SC3356 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3356 | |
| Descripción | NPN Silicon Plastic-Encapsulate Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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 1. NPN ( Datasheet PDF )  Hay una vista previa y un enlace de descarga de 2SC3356 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Elektronische Bauelemente
2SC3356
NPN Silicon
Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
n Power Dissipation
n RoHS Compliant Product
3.COLLECTOR
1.BASE
2.EMITTER
V
A
L
3
Top View
12
G
BS
D
MAXIMUM RATINGS* TA=25oC unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
IC
Emitter-Base Voltage
Collector Current -Continuous
PC
TJ, Tstg
Collector Dissipation
Junction and Storage Temperature
C
H
K
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
J All Dimension in mm
Value
20
12
3
0.1
0.2
-55~150
Units
V
V
V
A
W
oC
ELECTRICAL CH ARACTERIST ICS (Tam b = 25 oC unless otherwise sp ecified )
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=10µA, IE=0
20
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 1mA, IB=0
12
V
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
IE= 10µA, IC=0
VCB= 10 V , IE=0
3
V
1 µA
Emitter cut-off current
IEBO VEB= 1V , IC=0
1 µA
DC current gain
hFE
VCE= 10V, IC= 20mA
50
300
Transition frequency
fT
VCE=10V, IC= 20mA
6
GHz
Noise figure
F VCE=10V, IC= 7mA, f = 1GHz
2 dB
CLASSIFICATION OF hFE
Marking
R23
R24
R25
Rank
QRS
Range
50-100
80-160
125-250
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Free Datasheet http://wPwawg.deat1asohefe3t4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC3356.PDF ] | |
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