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PDF 2SC2883-O Data sheet ( Hoja de datos )
| Número de pieza | 2SC2883-O | |
| Descripción | NPN Silicon Power Transistors | |
| Fabricantes | MCC | |
| Logotipo |  |
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
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2SC2883-O
2SC2883-Y
Features
• Power amplifier applications
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Rating
30
30
5.0
1500
Unit
V
V
V
mA
PC Collector power dissipation
TJ Junction Temperature
TSTG
Storage Temperature
500
150
-55 to +150
mW
к
к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Typ. Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0)
V(BR)EBO
Collector-Emitter Breakdown Voltage*
(IE=1mAdc, IC=0)
ICBO Collector-Base Cutoff Current
(VCB=30Vdc,IE=0)
IEBO Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
30 ---
5 ---
--- ---
--- ---
--- Vdc
Vdc
0.1 uAdc
0.1 uAdc
hFE
VCE(sat)
VBE
fT
Cob
Forward Current Transfer ratio
(IC=0.5Adc, VCE=2.0Vdc)
Collector-Emitter Saturation Voltage
(IC=1.5Adc, IB=30mAdc)
Base-Emitter Voltage
(IC=0.5Adc, VCE=2.0Vdc)
Transition Frequency
(IC=0.5Adc, VCE=2.0Vdc)
Collector Output Capacitance
(VCB=10V, IE=0, f=1MHz)
100 --- 320
---
--- --- 2.0 Vdc
--- --- 1.0 Vdc
--- 120 --- MHz
--- --- 40
pF
CLASSIFICATION OF HFE
Rank
O
Y
Range
100-200
160-320
Marking
GO
GY
NPN Silicon
Power Transistors
SOT-89
A
B
E
C
D
G
H
F
1
1.BASE
2
3
2.COLLECTOR
3.EMITTER
K
J
.061
1.55
25
REF.
Revision: A
www.mccsemi.com
1 of 4
2011/01/01Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC2883-O.PDF ] | |
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