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PDF 2SC2883 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2883 | |
| Descripción | NPN Plastic-Encapsulate Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SC2883
1.5 A , 30 V
NPN Plastic-Encapsulate Transistor
FEATURES
Low Voltage.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
CLASSIFICATION OF hFE
Product-Rank
2SC2883-O
Range
100~200
Marking
GO
2SC2883-Y
160~320
GY
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
LeaderSize
7’ inch
SOT-89
4
123
A
EC
B
F
G
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min.
4.40
3.94
1.40
Max.
4.60
4.25
1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min.
0.40
1.50
3.00
Max.
0.58
TYP
TYP
0.32 0.52
0.35 0.44
Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
30
30
5
1.5
500
150, -55~150
Base
Emitter
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
30
-
-
V IC=1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
30
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=1mA, IC=0
Collector Cut-Off Current
ICBO - - 0.1 μA VCB=30V, IE=0
Emitter Cut-Off Current
IEBO - - 0.1 μA VEB=5V, IC=0
DC Current Gain
hFE 100 - 320
VCE=2V, IC=500mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
2 V IC=1.5A, IB=30mA
Base to emitter Voltage
VBE - - 1 V VCE=2V, IC=500mA
Transition Frequency
fT - 120 - MHz VCE=2V, IC = 500mA
Collector Output Capacitance
Cob - - 40 pF VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
14-Jan-2010 Rev. A
Any changes of specification will not be informed individually.
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