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PDF 2SC2855 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2855 | |
| Descripción | Silicon NPN Epitaxial | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC2855 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Free Datasheet http://www.datasheet4u.com/
1 page  
2SC2855, 2SC2856
Electrical Characteristics (Ta = 25°C)
2SC2855
2SC2856
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO 90
—
—
120 —
—
V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO 90
—
—
120 —
—
V
IC = 1 mA, RBE =
Emitter to base
breakdown voltage
V 5(BR)EBO
— —5
—— V
IE = 10 µA, IC = 0
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter
saturation voltage
I CBO
I EBO
hFE*1
VCE(sat)
— — 0.1 — — 0.1 µA
— — 0.1 — — 0.1 µA
250 — 800 250 — 800
— 0.05 0.10 — 0.05 0.10 V
VCB = 70 V, IE = 0
VEB = 2 V, IC = 0
VCE = 12 V, IC = 2 mA*2
IC = 10 mA, IB = 1 mA*2
Base to emitter saturation VBE(sat) —
voltage
0.7 1.0 —
0.7 1.0 V
Gain bandwidth product
Collector output
capacitance
fT
Cob
— 310 — — 310 — MHz VCE = 6 V, IC = 10 mA
— 3 — — 3 — pF
VCB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF — 0.15 1.5 — 0.15 1.5
— 0.2 2.0 — 0.2 2.0
Noise voltage referred to en
input
— 0.7 — — 0.7 —
Notes: 1. The 2SC2855 and 2SC2856 are grouped by hFE as follows.
2. Pulse test
DE
dB VCE = 6 V, IC = 0.1 mA,
Rg = 10 kΩ, f = 1 kHz
dB VCE = 6 V, IC = 0.1 mA,
Rg = 10 kΩ, f = 10 Hz
nV/√Hz VCE = 6 V, IC = 10 mA,
Rg = 0, f = 1 kHz
250 to 500 400 to 800
Free Datasheet http://www.datasheet4u.com/
5 Page 
Package Dimensions
4.8 ± 0.4
2SC2855, 2SC2856
3.8 ± 0.4
As of January, 2001
Unit: mm
0.60 Max
0.55Max
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet 2SC2855.PDF ] | |
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