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PDF 2SC2717 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2717 | |
| Descripción | NPN Plastic-Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SC2717
0.05A , 30V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Gain：Gpe=33 dB(Typ.)(f =45MHz)
Good Linearity of hFE
TO-92
GH
J
AD
B
K
E CF
Base
Emitter
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
30
25
4
50
300
125, -55~125
Base
Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation voltage
Transition Frequency
Collector Output Capacitance
Collector to Base Time Constant
Power Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
CC.rbb’
Gpe
Min.
30
25
4
-
-
40
-
-
300
0.8
-
28
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
240
0.2
1.5
-
2
25
36
Unit
V
V
V
μA
μA
V
V
MHz
pF
ps
dB
Test Condition
IC=100μA, IE=0
IC=10mA, IB=0
IE=100μA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
VCE=12.5V, IC=12.5mA
IC=15mA, IB=1.5mA
IC=15mA, IB=1.5mA
VCE=12.5V, IC=12.5mA
VCB=10V, IE=0, f=30MHz
VCB=10V, IE=-1mA, f=30MHz
VCC=12.5V, IE=-12.5mA,
f=45MHz
http://www.SeCoSGmbH.com/
14-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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