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PDF 2SC2715 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2715 | |
| Descripción | NPN Plastic-Encapsulate Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SC2715
0.05A , 35V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Power Gain
Recommended for FM IF,OSC Stage and AM CONV.
IF Stage.
CLASSIFICATION OF hFE
Product-Rank 2SC2715-R 2SC2715-O
Range
40~80
70~140
Marking
RR1
RO1
2SC2715-Y
120~240
RY1
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
SOT-23
A
L
3
Top View
CB
12
KE
1
3
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
35
30
4
50
350
150, -55~150
Base
Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
35
-
-
V IC=10μA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
30
-
-
V IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
4
-
-
V IE=10μA, IC=0
Collector Cut-Off Current
ICBO - - 0.1 μA VCB=35V, IE=0
Emitter Cut-Off Current
IEBO - - 0.1 μA VEB=4V, IC=0
DC Current Gain
hFE 40 - 240
VCE=12V, IC=2mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
- 0.4 V IC=10mA, IB=1mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
1 V IC=10mA, IB=1mA
Transition Frequency
fT 100 - 400 MHz VCE=10V, IC=1mA
Power Gain
Gpe 27 - 33 dB VCE=6V, IC=1mA, f=10.7MHz
http://www.SeCoSGmbH.com/
14-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
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