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PDF 2SC2712GT1G Data sheet ( Hoja de datos )

Número de pieza 2SC2712GT1G
Descripción Medium Frequency NPN Amplifier Transistor
Fabricantes ON Semiconductor 
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2SC2712GT1G
Medium Frequency
NPN Amplifier Transistor
50 V, 200 mA, 80 MHz
The 2SC2712GT1G is designed for low to medium frequency
applications such as wireless toys. The targeted design enables
improved performance versus the industry standard MMBT3904* in
some key parametric specifications.
Features
Lower VCE(sat)*
Higher Gain (hfe)*
Higher Breakdown Voltage Rating*
Moisture Sensitivity Level: 1
This is a PbFree Device
Benefits
Longer Battery Life
Improved Performance Through Targeted Design
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
CollectorBase Voltage
V(BR)CBO
60
Vdc
CollectorEmitter Voltage
V(BR)CEO
50
Vdc
EmitterBase Voltage
V(BR)EBO
5.0
Vdc
Collector Current Continuous
IC 150 mAdc
Collector Current Peak
IC(P)
200 mAdc
Base Current
IB 30 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Power Dissipation
Junction Temperature
Storage Temperature
PD 200 mW
TJ 150 °C
Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*Specifications compared to MMBT3904.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
3
2
1
SC59
CASE 318D
STYLE 1
MARKING DIAGRAMS
SCG M
SCG = Specific Date Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
2SC2712GT1G SC59
(PbFree)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
2SC2712GT1/D
Free Datasheet http://www.datasheet4u.com/

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