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PDF 2SC2712 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2712 | |
| Descripción | Silicon NPN Epitaxial Type Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
Silicon NPN Epitaxial Type Transistor
2SC2712
Features
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)
High hFE: hFE = 70 700
Low noise: NF = 1dB (typ.), 10dB (max)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
60
50
5
150
30
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Noise figure
Transition frequency
Symbol
Testconditons
ICBO VCB = 60 V, IE = 0
IEBO VEB = 5 V, IC = 0
hFE VCE = 6 V, IC = 2 mA
VCE (sat) IC = 100 mA, IB = 10 mA
Cob VCB = 10V, IE = 0, f = 1 MHz
NF
VCE = 6 V, IC = 0.1 mA , f = 1 KHz,
RG=10KÙ
fT VCE = 10V, IC =1 mA
1.Base
2.Emitter
3.collector
Min Typ Max Unit
0.1 A
0.1 A
70 700
0.1 0.25 V
2 3.5 pF
1 10 dB
80 MHz
hFE Classification
Marking
Rank
hFE
LO
O
70 140
LY
Y
120 240
LG
GR
200 400
LL
BL
350 700
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC2712.PDF ] | |
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