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PDF 2SC1623 Datasheet ( Hoja de datos )

Número de pieza 2SC1623
Descripción NPN EPITAXIAL PLANAR TRANSISTOR
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2SC1623 Hoja de datos, Descripción, Manual
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SC1623
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio frequency amplifier applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
60
50
5
100
200
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 60
Collector-Emitter Breakdown Voltage BVCEO 50
Emitter-Base Breakdown Volatge
BVEBO
5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
DC Current Gain(1)
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE
-
-
-
0.55
90
Transition Frequency
fT 250
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-
-
-
200
-
3
Max
-
-
-
0.1
0.1
0.3
1
0.65
600
-
-
Unit
V
V
V
µA
µA
V
V
V
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
IC=1mA, VCE=6V
IC=1mA, VCE=6V
IC=10mA, VCE=6V
VCB=6V, f=1MHz, IE=0
Classification of hFE
Rank
L4
Range
90~180
L5
135~270
L6
200~400
L7
300~600

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