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PDF 2SC1623 Data sheet ( Hoja de datos )
| Número de pieza | 2SC1623 | |
| Descripción | NPN Silicon Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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 1. Vcbo=60V, NPN Transistor - Renesas  Hay una vista previa y un enlace de descarga de 2SC1623 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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SMD Type
Transistors
Features
High DC Current Gain:
hFE = 200 TYP.
VCE = 6.0 V, IC = 1.0 mA
High Voltage:
VCE O = 50 V
NPN Silicon Transistor
2SC1623
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
60
50
5
100
200
150
-55 to +150
Unit
V
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Output capacitance
Transiton Frequency
*. PW 350ìs,duty cycle 2%
Symbol
Testconditons
ICBO VCB = 60V, IE=0
IEBO VEB = 5V, IC=0
hFE VCE = 6V , IC = 1mA
VCE(sat) IC = 100mA , IB = 10mA
VBE(sat) IC = 100mA , IB = 10mA
VBE VCE = 6V , IC = 1mA
Cob VCB = 6V , IE = 0 , f = 1.0MHz
fT VCE = 6V , IE = -10mA
hFE Classification
Marking
L4
hFE 90 to 180
L5
135 to 270
L6
200 to 400
L7
300 to 600
Min Typ Max Unit
0.1 A
0.1 A
90 200 600
0.15 0.3 V
0.86 1
V
0.55 0.62 0.65 V
3.0 pF
250 MHz
www.kexsienn.ceosm.c.ocmn 1
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC1623.PDF ] | |
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