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PDF 2SB766 Data sheet ( Hoja de datos )
| Número de pieza | 2SB766 | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jin Yu Semiconductor | |
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2SB7 66
TRANSISTOR(PNP)
SOT-89
FEATURES
z Large collector power dissipation PC
z Complementary to 2SD874
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-30
-25
-5
-1
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC =-10μA, IE=0
V(BR)CEO IC =-2mA, IB=0
V(BR)EBO IE=-10μA, IC=0
ICBO
VCB=-20V, IE=0
IEBO VEB=-4V, IC=0
hFE(1) VCE=-10V, IC=-500mA
hFE(2) VCE=-5V, IC=-1A
VCE(sat) IC=-500mA, IB=-50mA
VBE(sat) IC=-500mA, IB=-50mA
fT VCE=-10V, IC=-50mA, f=200MHz
Cob VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-30 V
-25 V
-5 V
-0.1 μA
-0.1 μA
85 340
50
-0.2 -0.4
V
-0.85 -1.2
V
200 MHz
20 30 pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Q
85-170
AQ
R
120-240
AR
S
170-340
AS
JinYu
semiconductor
www.htsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB766.PDF ] | |
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