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Número de pieza | 2SB1649 | |
Descripción | Silicon PNP Epitaxial Planar Transistor | |
Fabricantes | Sanken | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SB1649 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! Darlington
2SB1649
(70Ω) E
B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C) External Dimensions FM100(TO3PF)
Symbol
Ratings
Unit
Symbol
Conditions
Ratings
Unit
VCBO
–150
V ICBO
VCB=–150V
–100max
µA
VCEO
–150
V IEBO
VEB=–5V
–100max
µA
VEBO
–5
V V(BR)CEO
IC=–30mA
–150min
V
IC
–15
A hFE
VCE=–4V, IC=–10A
5000min∗
IB
–1
A
VCE(sat)
IC=–10A, IB=–10mA
–2.5max
V
PC
85(Tc=25°C)
W
VBE(sat)
IC=–10A, IB=–10mA
–3.0max
V
Tj
150 °C fT
VCE=–12V, IE=2A
45typ
MHz
Tstg
–55 to +150
°C
COB
VCB=–10V, f=1MHz
320typ
pF
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2 ton tstg
tf
(V)
(Ω) (A)
(V)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
–40 4 –10 –10 5 –10 10 0.7typ 1.6typ 1.1typ
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
1.75
2.15
1.05
+0.2
-0.1
0.8
5.45±0.1
5.45±0.1
0.65
+0.2
-0.1
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Part No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
–50mA
–10mA
–3mA
–15 –1.5mA
–1.0mA
–0.8mA
–10
–0.5mA
IB=–0.3mA
–5
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V)
–15
–2 –10
IC=–15A
IC=–10A
IC=–5A
–1 –5
0
0 –2 –4 –6
Collector-Emitter Voltage VCE(V)
0
–0.2 –0.5 –1
–5 –10
Base Current IB(mA)
–50 –100 –200
0
0 –1 –2 –3
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
50,000
(VCE=–4V)
10,000
5,000
Typ
h FE– I C Temperature Characteristics (Typical)
50000
125˚C
(VCE=–4V)
10000
25˚C
–30˚C
5000
θ j-a– t Characteristics
3
1
0.5
1,000
–0.2
–0.5
–1
–5
Collector Current IC(A)
–10 –15
1000
–0.2
–0.5
–1
–5
Collector Current IC(A)
–10 –15
0.1
1
10 100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=–12V)
60
40
Safe Operating Area (Single Pulse)
–50
–10
DC
1
00
m
1
s
0m
s
–5
20
0
0.02 0.05 0.1
0.5 1
54
Emitter Current IE(A)
5 10
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
–0.05
–3
–5 –10
–50 –100 –200
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
100
80
60
40
20
Without Heatsink
3.5
0
0 25 50 75 100 125
Ambient Temperature Ta(˚C)
150
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 2SB1649.PDF ] |
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