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PDF 2SB1623A Data sheet ( Hoja de datos )
| Número de pieza | 2SB1623A | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Power Transistors
2SB1623A
Silicon PNP epitaxial planar type
For power amplification
■ Features
• High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• Dielectric breakdown voltage of the package: > 5 kV
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
TC = 25°C
VCBO
VCEO
VEBO
IC
ICP
PC
−80
−80
−5
−4
−8
40
2.0
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Unit
V
V
V
A
A
W
°C
°C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
VBE
ICBO
ICEO
IEBO
hFE1
hFE2 *
VCE(sat)1
VCE(sat)2
fT
ton
tstg
tf
IC = −30 mA, IB = 0
VCE = −3 V, IC = −3 A
VCB = −80 V, IE = 0
VCE = −40 V, IB = 0
VEB = −5 V, IC = 0
VCE = −3 V, IC = − 0.5 A
VCE = −3 V, IC = −3 A
IC = −3 A, IB = −12 mA
IC = −5 A, IB = −20 mA
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
IC = −3 A, IB1 = −12 mA, IB2 = 12 mA
VCC = −50 V
−80
1 000
1 000
V
−2.5 V
−200 µA
−500 µA
−2 mA
10 000
−2 V
−4
20 MHz
0.3 µs
2.0 µs
0.5 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Publication date: January 2003
SJD00301AED
1
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