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PDF 2SB1475 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1475 | |
| Descripción | PNP Silicon Epitaxial Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
PNP Silicon Epitaxial Transistor
2SB1475
Features
Super miniature package.
High DC current IC(DC)=500mA max.
Low VCE(sat): VCE(sat)=-60mV at -100mA
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
-25
-16
-6
-500
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 µs, duty cycle
2%
Symbol
Testconditons
ICBO VCB = -16 V, IE = 0
IEBO VEB = -6.0 V, IC = 0
hFE VCE = -1.0 V, IC = -100 mA
IC = -100 mA, IB = -10 mA
VCE(sat)
IC = -500 mA, IB = -20 mA
VBE(sat) IC = -2A, IB = -0.1A
VBE VCE = -1.0 V, IC = -10 mA
fT VCE = -3.0 V, IE = 100 mA
Cob VCB = -10 V, IE = 0 , f = 1.0 MHz
hFE Classification
Marking
hFE
B42
110 240
B43
190 320
B44
270 400
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
-100 nA
-100 nA
110 200 400
-60 -120 mV
-250 -400 mV
-0.95 -1.2 V
-0.66 -0.7 V
50 MHz
15 pF
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| PDF Descargar | [ Datasheet 2SB1475.PDF ] | |
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