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PDF 2SB1414 Data sheet ( Hoja de datos )

Número de pieza 2SB1414
Descripción Silicon PNP Epitaxial Transistor
Fabricantes Panasonic 
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Power Transistors
2SB1414
Silicon PNP epitaxial planar type
For low-frequency driver/high power amplification
Complementary to 2SD2134
Features
Excellent current IC characteristics of forward current transfer ratio
hFE vs. collector
High transition frequency fT
Allowing automatic insertion with radial taping
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
150
150
5
1
1.5
1.5
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-emitter voltage (Base open)
Emiter-base voltage (Collector open)
Forward current transfer ratio *1
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCEO
VEBO
hFE1 *2
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
IC = −100 µA, IB = 0
IE = −10 µA, IC = 0
VCE = −10 V, IC = −150 mA
VCE = −5 V, IC = −500 mA
IC = −500 mA, IB = −50 mA
IC = −500 mA, IB = −50 mA
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Min
150
5
90
50
Typ
0.5
1.0
200
30
Max
330
2.0
2.0
Unit
V
V
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
90 to 155
130 to 220 185 to 330
Publication date: February 2002
SJD00070BED
1
Free Datasheet http://www.datasheet4u.com/

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