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PDF 2SB1412 Data sheet ( Hoja de datos )

Número de pieza 2SB1412
Descripción PNP Silicon Low Frequency Transistor
Fabricantes SeCoS　
Logotipo SeCoS Logotipo




1. 2SB1412






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No Preview Available ! 2SB1412 Hoja de datos, Descripción, Manual

Elektronische Bauelemente
2SB1412
-5A , -30V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Designed for general
Low VCE(sat)
D-Pack (TO-252)
CLASSIFICATION OF hFE
Product-Rank 2SB1412-P 2SB1412-Q
Range
82~180
120~270
2SB1412-R
180~390
A
BC
D
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
Collector
2
1
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction and Storage Temperature Range
VCBO
VCEO
VEBO
IC
PC
TJ ,TSTG
-30
-20
-6
-5
1
150 , -55~150
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.8 J
2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.25
H 0.64 1.20
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max.
Collector-base breakdown voltage
V(BR)CBO
-30
-
-
Collector-emitter breakdown voltage
V (BR)CEO
-20
-
-
Emitter-base breakdown voltage
V(BR)EBO
-6
-
-
Collector cut-off current
ICEO - - -0.5
Emitter cut-off current
IEBO - - -0.5
DC current gain
hFE 82 - 390
Collector-emitter saturation voltage
VCE(sat)
-
- -1
Transition frequency
fT - 120 -
Collector output capacitance
Cob - 60 -
Unit
V
V
V
µA
µA
V
Test Conditions
IC= -50µA, IE=0
IC= -1mA, IB=0
IE= -50µA, IC=0
VCB= -20V, IE=0
VEB= -5V, IC=0
VCE= -2V, IC= -0.5A
IC= -4A, IB= -100mA
MHz VCE= -6V, IC= -50mA, fT=30MHz
pF VCB= -20V, f=1MHz, IE=0
http://www.SeCoSGmbH.com/
17-May-2013 Rev. B
Any changes of specification will not be informed individually.
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