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PDF 2SB1427 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1427 | |
| Descripción | Power Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Power Transistor
2SB1427
Features
Low saturation voltage,
typically VCE(sat) =-0.5V at IC/IB =-1A/-50mA.
Excellent DC current gain characteristics.
Transistors
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=10ms
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Marking
Marking
BJE
Symbol
VCBO
VCEO
VEBO
IC
ICP *
PC
Tj
Tstg
Rating
-20
-20
-6
-2
-3
0.5
150
-55 to +150
Unit
V
V
V
A
A
W
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-16V
IEBO VEB=-5V
VCE(sat) IC=-1A,IB=-500mA
hFE VCE=-6V, IC=-0.5A
Cob VCE=-10V, IE=10mA, f=30MHz
fT VCB=-10V, IE=0A, f=1MHz
Min Typ Max Unit
-20 V
-20 V
-6 V
-0.5 ìA
-0.5 ìA
-0.5 V
390 820
90 MHz
30 pF
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB1427.PDF ] | |
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