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PDF 2SB1426 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1426 | |
| Descripción | PNP Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SB1426
-3A , -20V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification
CLASSIFICATION OF hFE
Product-Rank 2SB1426-P 2SB1426-Q
Range
82~180
120~270
2SB1426-R
180~390
TO-92
GH
J
AD
B
K
E CF
Emitter
Base
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-20
-20
-6
-3
0.75
166
150, -55~150
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Collector-Base Capacitance
Transition Frequency
*Pulse test
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
V*
CE(sat)
Ccb
fT
-20 - - V
-20 - - V
-6 - - V
- - -0.1 μA
- - -0.1 μA
82 - 390
- - -0.5 V
- 35 - pF
- 240 - MHz
Test condition
IC= -0.05mA, IE=0
IC= -1mA, IB=0
IE= -0.05mA, IC=0
VCB= -20V, IE=0
VEB= -5V, IC=0
VCE= -2V, IC= -0.1A
IC= -2A, IB= -0.1A
VCB= -10V, IE=0, f=1MHz
VCE= -2V, IC= -0.5A, f=100MHz
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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