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PDF MA3XD14E Data sheet ( Hoja de datos )
| Número de pieza | MA3XD14E | |
| Descripción | Schottky Barrier Diodes | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Schottky Barrier Diodes
MA3XD14E
Diodes
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
Features
Mini type 3-pin package
Low forward rise voltage VF (VF < 0.4 V)
Cathode common type
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
P aram eter
Symbol
Rating
Reverse voltage (DC)
VR 20
Repetitive peak reverse-voltage
IRRM
20
Non-repetitive peak forward-surge-current (Note 2)
IFSM
1
Forward current (DC)
Single
Double (Note 1)
IF
100
70
Peak forward current
Single
Double (Note 1)
IFM
300
200
Junction temperature
Tj 125
Storage temperature
Tstg -55 to+ 150
Note
1 : The value for operating one chip
2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
Unit
V
V
A
mA
mA
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Reverse current (DC)
IR
VR = 10 V
Forward voltage (DC)
VF
IF = 5 mA
IF = 100 mA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
Reverse recovery time*
Note
trr IF = IR = 100 mA, Irr = 10 mA, RL = 100
1. This product is sensitive to electric shock (static electricity, etc.).Due attention must be paid
on the charge of a human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. * : trr measuring circuit
Typ
25
3.0
Max
20
0.27
0.40
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Unit
A
V
V
pF
ns
Marking
Marking
M5H
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