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Número de pieza | 2N3716 | |
Descripción | 10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS | |
Fabricantes | Motorola Inc | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N3716 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon NPN Power Transistors
. . . designed for medium–speed switching and amplifier applications. These devices
feature:
• Total Switching Time at 3 A typically 1.15 µs
• Gain Ranges Specified at 1 A and 3 A
• Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A
• Excellent Safe Operating Areas
• Complement to 2N3791–92
Order this document
by 2N3715/D
NPN
2N3715
2N3716
10 AMPERE
POWER TRANSISTORS
SILICON NPN
60 – 80 VOLTS
150 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎMÎÎÎÎÎÎÎÎÎÎÎÎÎÎCCECBPTOAhmaoooopXeswÎÎÎÎÎÎÎÎÎÎÎÎÎÎlllellileeteerIretmMaccecrCttttraUoooiD–ÎÎÎÎÎÎÎÎÎÎÎÎÎÎunlrrrBMirg––RsrCaEBeseJusinRÎÎÎÎÎÎÎÎÎÎÎÎÎÎmauspertisnarAsieteVctttTinaetooÎÎÎÎÎÎÎÎÎÎÎÎÎÎVitnoIrlnNtocnValetGgoaaÎÎÎÎÎÎÎÎÎÎÎÎÎÎelngtSadegSeÎÎÎÎÎÎÎÎÎÎÎÎÎÎtoRraaÎÎÎÎÎÎÎÎÎÎÎÎÎÎgteinTgÎÎÎÎÎÎÎÎÎÎÎÎÎÎempÎÎÎÎÎÎÎÎÎÎÎÎÎÎeratuÎÎÎÎÎÎÎÎÎÎÎÎÎÎre RÎÎÎÎÎÎÎÎÎÎÎÎÎÎangÎÎÎÎÎÎÎÎÎÎÎÎÎÎe ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSTVJyVVθCP,ÎÎÎÎÎÎÎÎÎÎÎÎÎÎmIICJECBTEDCbBBsOtogÎÎÎÎÎÎÎÎÎÎÎÎÎÎl ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2N11746813.5..1000ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ7000715–ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ65 tÎÎÎÎÎÎÎÎÎÎÎÎÎÎo +2ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ002ÎÎÎÎÎÎÎÎÎÎÎÎÎÎN11174813.05..1007000071ÎÎÎÎÎÎÎÎÎÎÎÎÎÎCT6OA(TS–ÎÎÎÎÎÎÎÎÎÎÎÎÎÎO2E0–143–AÎÎÎÎÎÎÎÎÎÎÎÎÎÎ)0A7 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎAAW_VVVUC_mmoooanC/llltppWtttiÎÎÎÎÎÎÎÎÎÎÎÎÎÎtssstsss ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power–Temperature Derating Curve
Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed.
REV 7
©3M–o1to2rola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1 page 2N3715 2N3716
200
TJ = 175°C
150
100 25°C
50 – 40°C
0
0.01 0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Current Gain Variations
+ )hFE
IC – ICBO
IB ICBO
VCE = 2 V
2.0 3.0
5.0 7.0 10
8
6
4
VCE = 6 V
2
0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Current Gain — Bandwidth Product versus Collector Current
10
7 DC to 5 ms
5
500 µs
3 1 ms
2
1
0.7
0.5
0.3
0.2
SAFE OPERATING AREAS
≤ 50 µs
250 µs
10
7 DC to 5 ms
5
3 500 µs
2
1
0.7
0.5
0.3
0.2
1 ms
≤ 50 µs
250 µs
0.1
0 10 20 30 40 50 60 70
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 12. 2N3715
0.1
0 10 20 30 40 50 60 70 80 90
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13. 2N3716
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not go into secondary break-
down. Collector load lines for specific circuits must fall within
the applicable Safe Area to avoid causing a collector–emitter
short. (Duty cycle of the excursions make no significant
change in these safe areas.) To insure operation below the
maximum TJ, the power–temperature derating curve must be
observed for both steady state and pulse power conditions.
3–16
Motorola Bipolar Power Transistor Device Data
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2N3716.PDF ] |
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