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PDF 2SB1295 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1295 | |
| Descripción | PNP Epitaxial Planar Silicon Transistors | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
PNP Epitaxial Planar Silicon Transistors
2SB1295
Features
Large current capacity.
Low collector to emitter saturation voltage.
Very small-sized package permitting sets to be made
smaller and slimer.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-15
-15
-5
-0.8
-3
200
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
Testconditons
ICBO VCB = -12V , IE = 0
IEBO VEB = -4V , IC = 0
hFE VCE = -2V , IC = -50mA
fT VCE = -2V , IC = -50mA
Cob VCB = -10V , f = 1MHz
VCE(sat) IC = -5mA , IB = -0.5mA
VCE(sat) IC = -400mA , IB = -20mA
VBE(sat) IC = -400mA , IB =-20mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
hFE Classification
Marking
Rank
hFE
5
135 270
UL
6
200 400
7
300 600
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-100 nA
-100 nA
135 600
300 MHz
15 pF
-10 -25 mV
-100 -200 mV
-0.9 -1.2 V
-15 V
-15 V
-5 V
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