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PDF 2SB1217 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1217 | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1217
DESCRIPTION
·High Collector Current -IC= -3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
·Complement to Type 2SD1818
APPLICATIONS
·Designed for use in DC-DC converter, driver, solenid and
motor .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous -3 A
ICP Collector Current-Pulse
-5 A
IBB Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-0.5
10
1.3
150
-55~150
A
W
℃
℃
isc Website：www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1217.PDF ] | |
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