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PDF 2SB1197K Data sheet ( Hoja de datos )
| Número de pieza | 2SB1197K | |
| Descripción | Plastic-Encapsulated Transistors | |
| Fabricantes | TRANSYS | |
| Logotipo |  |
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Transys
Electronics
LIMITED
SOT-23-3L Plastic-Encapsulated Transistors
2SB1197K TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
200 mW (Tamb=25℃)
Collector current
ICM: -800 mA
Collector-base voltage
V(BR)CBO: -40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Ic=-50µA, IE=0
Ic=-1mA, IB=0
IE=-50µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-3V, IC=-100mA
IC=-0.5A, IB=-50mA
VCE=-5V, IC=-50mA
f=100MHz
VCE=-10V, IC=0
f=1MHz
-40
-32
-5
82
50 200
12
MAX
-0.5
-0.5
390
-0.5
UNIT
V
V
V
µA
µA
V
MHz
30 pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
P
82-180
AHP
Q
120-270
AHQ
R
180-390
AHR
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