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PDF TGF2023-2-20 Data sheet ( Hoja de datos )
| Número de pieza | TGF2023-2-20 | |
| Descripción | 90 Watt Discrete Power GaN on SiC HEMT | |
| Fabricantes | TriQuint | |
| Logotipo |  |
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Applications
• Defense & Aerospace
• Broadband Wireless
TGF2023-2-20
90 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC - 18 GHz
• 50.5 dBm Nominal PSAT at 3 GHz
• 70.5% Maximum PAE
• 19.2 dB Nominal Power Gain at 3 GHz
• Bias: VD = 12 - 32 V, IDQ = 400 - 2000 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 0.82 x 4.56 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-20 is a discrete 20 mm GaN
on SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-20 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
Pad Configuration
Pad No.
1-16
17
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
The TGF2023-2-20 typically provides 50.5 dBm of
saturated output power with power gain of 19.2 dB at
3 GHz. The maximum power added efficiency is
70.5 % which makes the TGF2023-2-20 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
Ordering Information
Part
ECCN Description
TGF2023-2-20 3A001b.3.b 90 Watt GaN HEMT
Datasheet: Rev C 09-27-13
© 2013 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
Free Datasheet http://www.datasheet4u.com/
1 page  
TGF2023-2-20
90 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Simulated signal: 10% pulses. Bond wires not included.
Load Pull
Model 3dB compression performance at 6GHz, 12V, 400mA, 25°C
Γs = 0.85 ∠ 164°
Zo = 4Ω
Max Model Power is 46.5dBm
at Γl = 0.6∠ 172°
Max Model PAE is 66.2%
at Γl = 0.54∠ 134°
Max Measured G3dB is 12.5dB
at Γl = 0.67∠ 122°
0.4
0.3
12.46
0.2
0.1
-0.1
11.93 66.06
11.46
11.03
10.63 62.26
10.28
58.8
46.51
55.64 45.9
52.77
50.16
47.79
45.62
42.88
43.2
43.55
43.93
45.33 44.82
44.36
P3dB
PAE3dB
G3dB
Load Pull
Model 3dB compression performance at 6GHz, 12V, 1000mA, 25°C
Γs = 0.85 ∠ 164°
Zo = 4Ω
Max Model Power is 46.2dBm
at Γl = 0.61∠ 173°
Max Model PAE is 64.8%
at Γl = 0.52∠ 135°
Max Measured G3dB is 14dB
at Γl = 0.68∠ 126°
0.4
0.3 13.99
0.2
0.1
-0.1
64.74 13.49
13.03
61.19
12.62
57.97
46.18 55.0345.64
52.36
49.92
47.71
45.69
12.24
11.89
45.15
11.58
44.7
44.3
11.29
43.93
43.59
43.28
P3dB
PAE3dB
G3dB
Load Pull
Model 3dB compression performance at 6GHz, 28V, 400mA, 25°C
Γs = 0.85 ∠ 164°
Zo = 4Ω
Max Model Power is 50.4dBm
at Γl = 0.36∠ 129°
Max Model PAE is 63.2%
at Γl = 0.55∠ 112°
Max Measured G3dB is 12.4dB
at Γl = 0.69∠ 97°
0.4 12.39
63.17
11.89
46.25
46.69
58.92
11.43 55.04
47.17
11.02
50.4
10.64
10.29
9.979
51.51
38.08
48.3 40.29
45.37
49.63
42.71 47.71
48.93
48.29
9.694
9.433
P3dB
PAE3dB
G3dB
Load Pull
Model 3dB compression performance at 6GHz, 28V, 1000mA, 25°C
Γs = 0.85 ∠ 164°
Zo = 4Ω
Max Model Power is 50.2dBm
at Γl = 0.38∠ 131°
Max Model PAE is 64.8%
at Γl = 0.55∠ 112°
Max Measured G3dB is 15dB
at Γl = 0.66∠ 98°
0.4 14.99
64.77
14.59 60.85
46
46.44
14.23
57.29
54.05
46.93
51.1
50.2 13.9
13.6
49.42
48.41
45.96
43.74
48.7
13.32
48.06
13.07
12.85
47.47
P3dB
PAE3dB
G3dB
Datasheet: Rev C 09-27-13
© 2013 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
Free Datasheet http://www.datasheet4u.com/
5 Page 
TGF2023-2-20
90 Watt Discrete Power GaN on SiC HEMT
Model Efficiency Tuned Data
Simulated signal: 10% pulses.
Pout & Drain Current vs. Input Power
55
50
VD=28 V, IDQ=400 mA
Freq.=6 GHz, Efficiency Tuned
Temp.=+25°C
45 Model Without Bond Wires
40
5.5
5.0
4.5
4.0
Gain & PAE vs. Input Power
40
VD=28 V, IDQ=400 mA
Temp.=+25°C
35
Freq.=6 GHz, Efficiency Tuned
Model Without Bond Wires
30
80
70
60
35
30
Pout
25
20
3.5 25
3.0
20
2.5
2.0 15
Gain
50
40
30
15 1.5 10 20
10 ID 1.0
PAE
5 0.5 5 10
0 0.0
-5 0 5 10 15 20 25 30 35 40
Input Power (dBm)
00
-5 0 5 10 15 20 25 30 35 40
Input Power (dBm)
Source Γ : fo: 0.85∠164°, 2fo: 0, 3fo: 0
Load Γ: fo: 0.55∠112°, 2fo: 0, 3fo: 0
Pout & Drain Current vs. Input Power
55
50
VD=28 V, IDQ=1000 mA
Freq.=6 GHz, Efficiency Tuned
Temp.=+25°C
45 Model Without Bond Wires
40
5.5
5.0
4.5
4.0
Gain & PAE vs. Input Power
40
VD=28 V, IDQ=1000 mA
Temp.=+25°C
35
Freq.=6 GHz, Efficiency Tuned
Model Without Bond Wires
30
80
70
60
35
30 Pout
25
20
15
10
5
ID
3.5 25
3.0
20
2.5
2.0 15
1.5 10
1.0
0.5 5
Gain
PAE
50
40
30
20
10
0 0.0
-5 0 5 10 15 20 25 30 35 40
00
-5 0 5 10 15 20 25 30 35 40
Input Power (dBm)
Input Power (dBm)
Source Γ: fo: 0.85∠164°, 2fo: 0, 3fo: 0
Load Γ: fo: 0.55∠112°, 2fo: 0, 3fo: 0
Datasheet: Rev C 09-27-13
© 2013 TriQuint
- 11 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet TGF2023-2-20.PDF ] | |
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