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PDF 2SB1189 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1189 | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jin Yu Semiconductor | |
| Logotipo |  |
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TRANSISTOR(PNP)
2SB1 1 8 9
FEATURES
z High breakdown voltage
z Complements to 2SD1767
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-80
-5
-0.7
0.5
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=-50μA,IE=0
V(BR)CEO IC=-2mA,IB=0
V(BR)EBO IE=-50μA,IC=0
ICBO
VCB=-50V,IE=0
IEBO VEB=-4V,IC=0
hFE VCE=-3V,IC=-100mA
VCE(sat) IC=-500mA,IB=-50mA
fT VCE=-10V,IC=-50mA,f=100MHz
Cob VCB=-10V,IE=0,f=1MHz
MIN TYP MAX UNIT
-80 V
-80 V
-5 V
-0.5 μA
-0.5 μA
82 390
-0.4 V
100 MHz
20 pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
BDP
Q
120-270
BDQ
R
180-390
BDR
JinYu
semiconductor
www.htsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1189.PDF ] | |
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