|
|
PDF 2SB1188 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1188 | |
| Descripción | PNP Silicon Medium Power Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SB1188 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Elektronische Bauelemente
2SB1188
-2A, -40V
PNP Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The 2SB1188 is designed for medium power amplifier applications.
FEATURES
Low VCE(sat)
RoHS Compliant Product
CLASSIFICATION OF hFE
Product-Rank 2SB1188-Q
Range
120~270
Marking
BCQ
2SB1188-R
180~390
BCR
SOT-89
123
A
EC
4
B
F
G
H
J
D
K
L
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
Collector
Base
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.25 2.60
1.50 1.85
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
Ratings
-40
-32
-5
-2
500
250
150, -55~150
Unit
V
V
V
A
mW
°C/ W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector-base breakdown voltage
V(BR)CBO
-40
-
-
Collector-emitter breakdown voltage
V(BR)CEO
-32
-
-
Emitter-base breakdown voltage
V(BR)EBO
-5
-
-
Collector cut-off current
ICBO
- - -1
Emitter cut-off current
Collector-emitter saturation voltage 1
DC current gain 1
IEBO - - -1
VCE(sat)
-
- -0.8
hFE 120 - 390
Transition frequency
fT - 100 -
Output Capacitance
COB - 50 -
Notes:
1. Measured by pulse current.
http://www.SeCoSGmbH.com/
22-Oct-2015 Rev. F
Unit Test Condition
V IC= -50μA , IE=0
V IC= -100μA, IB=0
V IE= -50μA, IC=0
μA VCB= -20V, IE=0
μA VEB= -4V, IC=0
V IC= -2A, IB= -200mA
VCE= -3V, IC= -500mA
MHz VCE= -5V, IC= -500mA, f=30MHz
pF VCB= -10V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1188.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SB1180 | Silicon PNP Epitaxial Planar Type |  Panasonic |
| 2SB1180A | Silicon PNP Epitaxial Planar Type | Panasonic |
| 2SB1181 | Power Transistor |  ROHM Semiconductor |
| 2SB1181 | Power Transistor |  Kexin |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |