|
|
PDF 2SB1182D Data sheet ( Hoja de datos )
| Número de pieza | 2SB1182D | |
| Descripción | PNP Silicon General Purpose Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SB1182D (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Elektronische Bauelemente
2SB1182D
PNP Silicon
General Purpose Transistor
FEATURES
The 2SB1182DX is designed for medium power amplifier application
Low collector saturation voltage: VCE(sat)=-0.5V (Typ.)
RoHS Compliant Product
MARKING : 1182
(With Date Code)
MAX*IMUM RATINGS* TA=25OC unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current -Pulse,Pw=100mS
Collector Dissipation
Junction and Storage Temperature
6. 50Ć0. 15
5. 30Ć0. 10
C
TO-252
0. 51Ć0. 05
2. 30Ć0. 10
0. 51Ć0. 10 1. 20
0Ć0. 10
5
0. 80Ć0. 10
5
5
2. 30Ć0. 10
B
C
0. 60Ć0. 10
2. 30Ć0. 10
E
0 Ć9
0. 51
Symbol
VCBO
VCEO
VEBO
IC
IC
PC
TJ, Tstg
Value
-40
-32
-5
-2
-2
10
+150,-55~+150
Units
V
V
V
A
A
W
ć
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO Ic=-50µA, IE=0
-40
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CEO Ic= -1mA,IB=0
V(BR)EBO IE= -50µA, IC=0
ICBO
VCB=-20V,IE=0
IEBO VEB=-4V,IC=0
hFE VCE=-3V,IC=-500mA
VCE(sat) IC=-500mA,IB=-200mA
fT VCE=-5V,Ic=500mA,f=100MHz
Cob VCB=-10V,f=1MHz
-32
-5
82
-500
100
50
V
V
-1 uA
-1 uA
390
-800 V
MHz
pF
CLASSIFICATION OF hFE
Rank
PQR
Range
82 - 180
120 - 270
180 - 390
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1182D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SB1182 | Medium power Transistor |  ROHM Semiconductor |
| 2SB1182 | Silicon PNP Power Transistor |  Inchange Semiconductor |
| 2SB1182 | Medium Power Transistor |  Kexin |
| 2SB1182 | PNP PLASTIC ENCAPSULATE TRANSISTORS |  Weitron |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |