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PDF 2SB1179 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1179 | |
| Descripción | Silicon PNP Epitaxial Planar Type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Power Transistors
2SB1179, 2SB1179A
Silicon PNP epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1749, 2SD1749A
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity
• High-speed switching
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB1179 VCBO
2SB1179A
−60
−80
Collector-emitter voltage 2SB1179 VCEO
(Base open)
2SB1179A
−60
−80
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Ta = 25°C
VEBO
IC
ICP
PC
−5
−4
−8
15
1.3
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Unit
V
V
V
A
A
W
°C
°C
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
■ Electrical Characteristics TC = 25°C ± 3°C
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB1179 VCEO
2SB1179A
IC = −30 mA, IB = 0
−60
−80
V
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
2SB1179
2SB1179A
VBE
ICBO
Collector-emitter cutoff
current (Base open)
2SB1179
2SB1179A
ICEO
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
IEBO
hFE1
hFE2 *
VCE(sat)
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = −3 V, IC = −3 A
VCB = −60 V, IE = 0
VCB = −80 V, IE = 0
VCE = −40 V, IB = 0
VCE = −40 V, IB = 0
VEB = −5 V, IC = 0
VCE = −3 V, IC = − 0.5 A
VCE = −3 V, IC = −3 A
IC = −3 A, IB = −12 mA
IC = −5 A, IB = −20 mA
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
IC = −3 A, IB1 = −12 mA, IB2 = 12 mA
VCC = −50 V
1 000
2 000
−2.5 V
−200 µA
−200
−500 µA
−500
−2 mA
10 000
−2 V
−4
20 MHz
0.3 µs
2.0 µs
0.5 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2 2 000 to 5 000 4 000 to 10 000
Publication date: February 2003
SJD00055AED
1
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| PDF Descargar | [ Datasheet 2SB1179.PDF ] | |
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