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PDF 2SB1132 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1132 | |
| Descripción | Transistors | |
| Fabricantes | TRANSYS | |
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Transys
Electronics
LIMITED
SOT-89 Plastic-Encapsulated Transistors
2SB1132 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
0.5 W (Tamb=25℃)
Collector current
ICM: -1 A
Collector-base voltage
V(BR)CBO: -40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=-50µA, IE=0
Ic=-1mA, IB=0
IE=-50µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-3V, IC=-100mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-50mA, f=30MHz
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-40 V
-32 V
-5 V
-0.5 µA
-0.5 µA
82 390
-0.5 V
150 MHz
20 30 pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
P
82-180
BAP
Q
120-270
BAQ
R
180-390
BAR
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB1132.PDF ] | |
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