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PDF H20R1203 Data sheet ( Hoja de datos )

Número de pieza H20R1203
Descripción Reverse conducting IGBT
Fabricantes Infineon 
Logotipo Infineon Logotipo

H20R1203 transistor


1. Transistor - 1200V, 20A, IGBT






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No Preview Available ! H20R1203 Hoja de datos, Descripción, Manual

InductionHeatingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW20N120R3
Datasheet
IndustrialPowerControl
Free Datasheet http://www.datasheet4u.com/

1 page




H20R1203 pdf
InductionHeatingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.50mA
VGE=15.0V,IC=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.50mA,VCE=VGE
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=20.0A
IHW20N120R3
min.
Value
typ.
max. Unit
1200 -
-V
-
-
1.48 1.70
1.70 -
V
- 1.80 -
-
-
1.55 1.75
1.70 -
V
- 1.80 -
5.1 5.8 6.4 V
- - 100.0 µA
- - 2500.0
- - 100 nA
- 18.3 - S
none
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=960V,IC=20.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 1503 -
- 50 - pF
- 42 -
- 211.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-off delay time
Fall time
Turn-off energy
td(off)
tf
Eoff
Tvj=25°C,
VCC=600V,IC=20.0A,
VGE=0.0/15.0V,
rG=15.0,Lσ=180nH,
Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
min. typ. max. Unit
- 387 - ns
- 25 - ns
- 0.95 - mJ
5 Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

5 Page





H20R1203 arduino
InductionHeatingSeries
IHW20N120R3
15.0
240V
960V
12.5
10.0
7.5
5.0
1000
100
Ciss
Coss
Crss
2.5
0.0
0
40 80 120 160
QGE,GATECHARGE[nC]
Figure 17. Typicalgatecharge
(IC=20A)
200
10
0 10 20 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
11
D=0.5
D=0.5
0.2 0.2
0.1 0.1 0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse
single pulse
0.01 0.01
0.001
1E-6
i: 1 2
3456
ri[K/W]: 9.8E-3 0.01407993 0.0698 0.1158 0.1569 0.1137
τi[s]: 2.8E-5 4.7E-5
2.0E-4 1.2E-3 9.9E-3 0.08835259
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 19. IGBTtransientthermalimpedance
(D=tp/T)
0.001
1E-6
i: 1 2 3 4 5 6
ri[K/W]: 9.8E-3 0.0141 0.0698 0.1158 0.1569 0.1137
τi[s]: 2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 20. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
11 Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

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