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PDF KTC4379 Data sheet ( Hoja de datos )
| Número de pieza | KTC4379 | |
| Descripción | TRANSISTOR | |
| Fabricantes | TY Semiconductor | |
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■ Features
● Collector Power Dissipation: PC=500mW
● Collector Current: IC=2A
● Complementary to KTA1666
Product specification
KTC4379
SOT-89
4.50±0.1
1.80±0.1
Unit:mm
1.50 ±0.1
123
0.48±0.1
0.53±0.1
0.44±0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
3.00±0.1
Rating
50
50
5
2
500
150
-55 to 150
Unit
V
V
V
A
mW
℃
℃
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
Collector Output Capacitance
VCE(sat)
VBE(sat)
fT
Cob
■ hFE Classification
Marking
Rank
Range
UO
O
70～140
UY
Y
120～240
Test conditons
IC= 1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=1.5A
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCB=10V, IE=0, f=1MHz
Min Typ Max Unit
50 V
50 V
5V
100 nA
100 nA
70 240
40
0.5 V
1.2 V
120 MHz
30 pF
http://www.twtysemi.com
4008-318-123
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