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PDF KTC4376 Data sheet ( Hoja de datos )
| Número de pieza | KTC4376 | |
| Descripción | TRANSISTOR | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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SMD Type
■ Features
● Collector Power Dissipation: PC=500mW
● Collector Current: IC=800mA
TranDsiisotdIoCers
Product specification
KTC4376
SOT-89
4.50±0.1
1.80±0.1
123
0.48±0.1
0.53±0.1
Unit:mm
1.50 ±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
35
30
5
800
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition frequency
Collector Output Capacitance
VCE(sat)
VBE
fT
Cob
■ hFE Classification
Marking
Rank
Range
PO
O
100～200
PY
Y
160～320
Test conditons
IC= 1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=35V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=700mA
IC=500mA, IB=20mA
VCE=1V, IC=10mA
VCE=5V, IC=10mA
VCB=10V, IE=0, f=1MHz
Unit
V
V
V
mA
mW
℃
℃
Min Typ Max Unit
35 V
30 V
5V
100 nA
100 nA
100 320
35
0.5 V
0.8 V
120 MHz
13 pF
http://www.twtysemi.com
4008-318-123
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