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PDF 2SB792 Data sheet ( Hoja de datos )
| Número de pieza | 2SB792 | |
| Descripción | Transistor | |
| Fabricantes | TY Semiconductor | |
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Product specification
2SB792,2SB792A
Features
High collector-emitter voltage VCEO
Low noise voltage NV
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
2SB792
2SB792A
2SB792
2SB792A
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-150
-185
-150
-185
-5
-50
-100
200
150
-55 to +150
Unit
V
V
V
V
V
mA
mA
mW
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
2SB792
2SB792A
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
2SB792
2SB792A
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
hFE Classification
Marking
2SB792
2SB792A
Rank
hFE
IR
2FR
R
130 220
Symbol
Testconditons
Min Typ Max Unit
VCEO IC = -100 ìA, IB = 0
-150
-185
V
V
VEBO IE = -10 ìA, IC = 0
-5 V
ICBO VCB = -100 V, IE = 0
-1 ìA
hFE VCE = -5 V, IC = -10 mA
130 450
130 330
VCE(sat) IC = -30 mA, IB = -3 mA
-1 V
fT VCE = -10 V, IC = -10 mA, f = 200 MHz 200 MHz
Cob VCB = -10 V, IE = 0, f = 1 MHz
4 pF
NV
VCE = -10 V, IC = -1 mA, GV = 80 dB
Rg = 100KÙ, Function = FLAT
150 mV
IS
2FS
S
185 330
IT
T
260 450
http://www.twtysemi.com
4008-318-123
1 of 1
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| PDF Descargar | [ Datasheet 2SB792.PDF ] | |
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