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PDF 2SB805 Data sheet ( Hoja de datos )
| Número de pieza | 2SB805 | |
| Descripción | Transistor | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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Features
High collector to emitter voltage: VCEO -100V.
Product specification
2SB805
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *1
Collector power dissipation
Junction temperature
Storage temperature
*1. PW 10ms,duty cycle 50%
Symbol
VCBO
VCEO
VEBO
IC
IC(pu)
Pc
Tj
Tstg
Rating
-100
-100
-5
-0.7
-1.2
2
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Output capacitance
Transition frequency
* PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
KM
90 180
KL
135 270
Symbol
Testconditons
ICBO VCB = -100V, IE=0
IEBO VEB = -5V, IC=0
VCE =-1V , IC = -100mA
hFE
VCE =-1V , IC = -5.0mA
VCE(sat) IC = -500mA , IB = -50mA
VBE(sat) IC = -500mA , IB = -50mA
VBE VCE =-10V , IC = -10mA
Cob VCB = -10V , IE = 0 , f = 1.0MHz
fT VCE = -10V , IE = 10mA
KK
200 400
Min
90
45
-550
Typ
200
200
-0.4
-0.9
-620
14
75
Max
-100
-100
400
-0.6
-1.5
-650
Unit
nA
nA
V
V
mV
pF
MHz
http://www.twtysemi.com
4008-318-123
1 of 1
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| PDF Descargar | [ Datasheet 2SB805.PDF ] | |
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