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PDF 2SB857 Data sheet ( Hoja de datos )
| Número de pieza | 2SB857 | |
| Descripción | PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SB857
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (continuous)
Collector Current (peak)
Total Power Dissipation(TC=25oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC
PD
TJ
TSTG
Rating
-70
-50
-5
-4
-8
40
+150
-55 to +150
Unit
V
V
V
A
A
W
oC
oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol
Collector-Base Breakdown Volatge
BVCBO
Collector-Emitter Breakdown Voltage
BVCEO
Emitter-Base Breakdown Voltage
BVEBO
Collector Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
ICBO
VCE(sat)
VBE(on)
DC Current Gain(1)
hFE1
hFE2
Transition Frequency
fT
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Min
-70
-50
-5
-
-
-
35
60
-
Typ Max Unit
Test Conditions
- - V IC=-10µA, IE=0
- - V IC=-50mA, IB=0
- - V IE=-10µA, IC=0
- -1 µA VCB=-50V, IE=0
- -1 V IC=-2A, IB=-0.2A
- -1 V IC=-1A, VCE=-4V
- - - IC=-0.1A, VCE=-4V
- 320 - IC=-1A, VCE=-4V
15 - MHz IC=-500mA, VCE=-4V, f=100MHz
Classification of hFE2
Rank
B
C
Range
60~120
100~200
D
160~320
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