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PDF 2SB852 Data sheet ( Hoja de datos )
| Número de pieza | 2SB852 | |
| Descripción | Transistor | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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■ Features
● Darlington connection for high DC current gain.
● Built-in 4kΩ resistor between base and emitter.
C
B
RBE 4kΩ
E
Product specification
2SB852
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
12
0.95+0.1
-0.1
1.9+0.1
-0.1
0.1+0.05
-0.01
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation(TOTAL)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-40
-32
-6
-300
200
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Collector cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
Test conditions
V(BR)CBO Ic= -100μA, IE=0
V(BR)CEO Ic= -1 mA， IB=0
V(BR)EBO IE= -100 μA， IC=0
IcBO VCB= -24 V , IE=0
IEBO VCE= -4.5V , IC=0
hFE VCE= -5V, IC= -100mA
VCE(sat) IC=-200 mA, IB= -0.4mA
fT VCE= -5V, IC= -10mA,f=100MHz
Cob VCB=-10V, IE=0A, f=1MHz
■ Marking
Marking
U*
Unit
V
V
V
mA
mW
℃
℃
Min Typ Max Unit
-40 V
-32 V
-6 V
-1 μA
-1 μA
5000
-1.5 V
200 MHz
3 PF
http://www.twtysemi.com
4008-318-123
1 of 2
Free Datasheet http://www.datasheet4u.com/
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB852.PDF ] | |
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