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PDF 2SB935 Data sheet ( Hoja de datos )
| Número de pieza | 2SB935 | |
| Descripción | Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SB935
Features
Low collector-emitter saturation voltage VCE(sat).
High-speed switching.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector-base cutoff curent
Emitter-base cutoff current
Collector-emitter voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-40
-20
-5
-10
-15
1.3
150
-55 to +150
Unit
V
V
V
A
A
W
1 Base
2 Collector
3 Emitter
Symbol
Testconditons
ICBO VCB = -40 V,IE = 0
IEBO VEB = -5 V, IC = 0
VCEO IC = -10mA, IB = 0
VCE = -2 V, IC = -2 A
hFE
VCE = -2 V, IC = -0.1 A
VCE(sat) IC = -7 A, IB = -0.23 A
VBE(sat) IC = -7 A, IB = -0.23 A
fT VCE = -10 V, IE = -0.5 A , f = 10 MHz
Cob VCB = -10V , IE = 0 , f = 1.0MHz
ton
tstg IC = -2 A,IB1 = -66 mA,IB2 = 66 mA
tf
Min Typ Max Unit
-50 ìA
-50 ìA
-20 V
90 260
V
45
-1.5 V
-0.6 V
150 MHz
200 pF
0.1 ìs
0.5 ìs
0.1 ìs
hFE Classification
Rank
hFE
Q
90 180
P
130 260
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB935.PDF ] | |
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