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PDF 2SB962-Z Data sheet ( Hoja de datos )
| Número de pieza | 2SB962-Z | |
| Descripción | Transistor | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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Product specification
2SB962-Z
Features
Low VCE(sat): VCE(sat)=-0.3V.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current pulse *
Total power dissipation
Junction temperature
Storage temperature range
* PW 10ms,duty cycle 50%.
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
Rating
-40
-30
-5
-3
-6
2
150
-55 to +150
Unit
V
V
V
A
A
W
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 µs, duty cycle
2%
Symbol
Testconditons
ICBO VCB = -30 V, IE = 0
IEBO VEB = -3.0 V, IC = 0
VCE = -2.0 V, IC = -1A
hFE
VCE = -2.0 V, IC =-20mA
VCE(sat) IC = -2A, IB = -0.2A
VBE(sat) IC = -2A, IB = -0.2A
fT VCE = -5.0 V, IE = 100mA
Cob VCB = -10 V, IE = 0 , f = 1.0 MHz
Min Typ Max Unit
-10 µA
-1 µA
60 160 400
30 150
-0.3 -0.5 V
-1 -2
V
80 MHz
55 pF
hFE Classification
Rank
hFE
R
60 120
Q
100 200
P
160 320
E
200 400
http://www.twtysemi.com
4008-318-123
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| PDF Descargar | [ Datasheet 2SB962-Z.PDF ] | |
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