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PDF 2SB974 Data sheet ( Hoja de datos )
| Número de pieza | 2SB974 | |
| Descripción | Silicon PNP Darlington Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB974
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= -2A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -2A
·Complement to Type 2SD1308
APPLICATIONS
·Designed for audio frequency power amplifier and low-speed
switching industrial use.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-5 A
ICM Collector Current-Peak
-10 A
IBB Base Current-DC
Collector Power Dissipation
TC=25℃
PC
Collector Power Dissipation
Ta=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
-0.5 A
30
W
1.5
150 ℃
-55~150 ℃
isc Website：www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB974.PDF ] | |
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