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PDF 2SA1615-Z Data sheet ( Hoja de datos )
| Número de pieza | 2SA1615-Z | |
| Descripción | Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Silicon Power Transistors
2SA1615-Z
Transistors
Features
Large current capacity.
High hFE and low collector saturation voltage.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
1 Base
2 Collector
3 Emitter
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse
Base current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Icp *
IB
PT
Tj
Tstg
Rating
-30
-20
-10
-10
-15
-0.5
1.0
150
-55 to +150
Unit
V
V
V
A
A
A
W
* PW 10 ms, duty cycle 50%
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
* Pulse test: tp 350 ìs; d 0.02.
Symbol
Testconditons
ICBO VCB = -20V, IE=0
IEBO VEB = -8V, IC=0
VCE = -2V , IC = -0.5A
hFE
VCE = -2.0 V, IC =-4.0 A
VCE(sat) IC = -4A , IB = -0.05A
VBE(sat) IC = -4A , IB = -0.05A
fT VCE = -5V , IE = 1.5A
Cob VCB = -10V , IE = 0 , f = 1.0MHz
ton IC = -5.0 A, IB1 = -IB2 = 0.125 A,
tstg RL = 2.0 , VCC = -10 V
tf
Min Typ Max Unit
-1 ìA
-1 ìA
200 600
160
-0.2 -0.25 V
-0.9 -1.2
180 MHz
220 pF
80 ns
300 ns
60 ns
hFE Classification
Marking
hFE
L
200 400
K
300 600
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