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PDF 2N3583 Datasheet ( Hoja de datos )

Número de pieza 2N3583
Descripción 5 Amp/ 250V/ High Voltage NPN Silicon Power Transistors
Fabricantes Microsemi Corporation 
Logotipo Microsemi Corporation Logotipo

Total 3 Páginas
		
2N3583 Hoja de datos, Descripción, Manual
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
APPLICATIONS:
Off-Line Inverters
Switching Regulators
Motor Controls
Deflection Circuits
DC-DC Converters
High Voltage Amplifiers
FEATURES:
High Voltage: 250 to 500V High Current: 2 Amps
Fast Switching: tf < 3µ sec. Low VCE (SAT)
High Power: 35 Watts
2N3583
5 Amp, 250V,
High Voltage
NPN Silicon Power
Transistors
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200° C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
VCBO*
VCEO*
Collector-Base Voltage
Collector-Emitter Voltage
VCER*
VEBO*
Collector-Emitter Voltage RBE = 50
Emitter-Base Voltage
IC* Peak Collector Current
IC* Continuous Collector Current
IB* Base Current
TSTG*
TJ*
Storage Temperature
Operating Junction Temperature
* Lead Temperature 1/16" from Case for 10 Sec.
PT*
θ JC
Power Dissipation
TC = 25° C
Thermal Impedance
* Indicates JEDEC registered data.
MSC1055.PDF 05-19-99
TO-66
VALUE
250
175
250
6
5
1
1
-65 to 200
-65 to 200
235
35
5.0
UNITS
Volts
Volts
Volts
Volts
Amps
Amps
Amps
°C
°C
°C
Watts
° C/W

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2N3583 datasheet

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