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PDF 2SA1576F Data sheet ( Hoja de datos )
| Número de pieza | 2SA1576F | |
| Descripción | PNP Silicon General Purpose Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SA1576F
PNP Silicon
General Purpose Transistor
Feature
· Complements the 2SC4081F
COLLECTOR
3
1
BASE
2
EMITTER
1
Marking Code: 5AX
X = hFE Rank Code
3
2
RoHS Compliant Product
A
L
3
Top View
12
VG
BS
C
D HK
J
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Ratings
+150
-55~+150
-60
-50
-6
-150
225
Unit
ć
ć
V
V
V
mA
mW
Characteristics at Ta = 25к
Parameter
Symbol Min Typ. Max Unit
Test Conditions
Collector-Base Breakdown Voltage
BVCBO -60 - - V IC=-50uA
Collector-Emitter Breakdown Voltage
BVCEO -50 - - V IC=-1mA
Emitter-Base Breakdown Voltage
BVEBO -6 - - V IE=-50uA
Collector-Emitter Breakdown Voltage
ICBO
- - -100 nA VCB=-60V
Emitter-Base Cutoff Current
IEBO
- - -100 nA VEB=-6V
Collector Saturation Voltage 1
VCE(sat) - - -500 mV IC=-50mA, IB=-5mA
DC Current Gain
hFE
120 -
560
- VCE=-6V, IC=-1mA
Gain-Bandwidth Product
fT - 140 - MHz VCE=-12V, IE=-2mA, f=100MHz
Output Capacitance
Cob - 4.0 5.0 pF VCB=-12V, f=1MHz, IE=0
Classification of hFE
Rank
Q
*Pulse Test: Pulse Width = 380us, Duty Cycle = 2%
RS
Range
120 - 270
180 - 390
270 - 560
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Free Datasheet http://wPwawg.deat1asohef e3t4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA1576F.PDF ] | |
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