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PDF 2SA1434 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1434 | |
| Descripción | Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
PNP Epitaxial Planar Silicon Transistor
2SA1434
Features
Adoption of FBET process.
High DC current gain (hFE=500 to 1200).
Low collector-to-emitter saturation voltage
(VCE(sat) 0.5V).
High VEBO (VEBO 15V).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Icp
PC
Tj
Tstg
Rating
-60
-50
-15
-100
-200
200
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Marking
Marking
FL
Symbol
Testconditons
ICBO VCB = -40V, IE=0
IEBO VEB = -10V, IC=0
hFE VCE = -5V , IC = -10mA
fT VCE = -10V , IC = -10mA
Cob VCB = -10V , f = 1.0MHz
VCE(sat) IC = -50mA , IB = -1mA
VBE(sat) IC = -10ìA , IB = -1mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
500 800 1200
100 MHz
4.8 pF
-0.2 -0.5 V
-0.8 -1.1 V
-60 V
-50 V
-15 V
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