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PDF 2SA1416 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1416 | |
| Descripción | Transistor | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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SMD Type
Product specification
2SA1416
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
Fast Switching Time
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* Mounted on ceramic board (250 mm2 x 0.8 mm)
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PC *
Tj
Tstg
Rating
-120
-100
-6
-1
-2
500
1.3
150
-55 to +150
Unit
V
V
V
A
A
mW
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain-Bandwidth Product
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
Testconditons
ICBO VCB = -100V , IE = 0
IEBO VEB = -4V , IC = 0
V(BR)CBO IC = -10uA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10uA , IC = 0
hFE VCE = -5V , IC = -100mA
VCE(sat) IC = -400mA , IB = -40mA
VBE(sat) IC = -400mA , IB = -40mA
fT VCE = -10V , IC = -100mA
Cob VCB = -10V , IE = 0 , f = 1MHz
ton
tstg See Test Circuit.
tf
Min Typ Max
-100
-100
-120
-100
-6
100 400
-0.2 -0.6
-0.85 -1.2
120
13
Unit
nA
nA
V
V
V
V
V
MHz
pF
80
700 ns
40
http://www.twtysemi.com
4008-318-123
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA1416.PDF ] | |
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