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PDF 2SA1411 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1411 | |
| Descripción | Transistor | |
| Fabricantes | TY Semiconductor | |
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Product specification
2SA1411
Features
Very high DC current gain:hFE=500 to 1600.
High VEBO Voltage:VEBO=-10V
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
at 25 ambient temperature
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
-25
-25
-10
-150
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base-emitter voltage *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
* PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
M15
500 1000
M16
800 1600
Symbol
Testconditons
ICBO VCB = -25 V, IE = 0
IEBO VEB = -7 V, IC = 0
hFE VCE = -5 V, IC = -1 mA
VBE VCE = -5 V, IC = -1 mA
VCE(sat) IC = -50mA , IB = -5mA
VBE(sat) IC = -50mA , IB = -5mA
fT VCE = -5V , IE = 10mA
Cob VCB = -5V , IE = 0 , f = 1.0MHz
ton VCC = -10V , VBE(off) = 2.7V ,
tstg IC = -50mA ,
toff IB1 = -IB2 = -1mA
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-100 nA
-100 nA
500 1000 1600
-580
mV
-0.15 -0.3 V
-0.8 -1.2 V
200 MHz
4.6 pF
0.12 ns
0.58 ns
0.75 ns
http://www.twtysemi.com
4008-318-123
1 of 1
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