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Número de pieza | 2SC3624 | |
Descripción | Transistor | |
Fabricantes | Kexin | |
Logotipo | ||
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No Preview Available ! SMD Type
TransistIoCrs
NPN Silicon Epitaxial Transistor
2SC3624
Features
High DC current Gain: hFE = 1000 to 3200.
Low VCE(sat): (VCE(sat) = 0.07 V TYP).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
60
50
12
150
200
150
-55 to +150
Unit
V
V
V
mA
mW
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base-emitter voltage *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW 350ìs,duty cycle 2%
Symbol
Testconditons
ICBO VCB = 50V, IE=0
IEBO VEB = 10V, IC=0
hFE VCE = 5V , IC = 1mA
VBE VCE = 5V , IC = 1mA
VCE(sat) IC = 50mA , IB = 5mA
VBE(sat) IC = 50mA , IB = 5mA
fT VCE = 5V , IE = -10mA
Cob VCB = 5V , IE = 0 , f = 1.0MHz
ton VCC = 10V , VBE(off) = -2.7V
tstg IC = 50mA ,
toff IB1 = -IB2 = 1mA
hFE Classification
Marking
hFE
L17
1000 2000
L18
1600 3200
Min Typ Max Unit
100 nA
100 nA
1000 1800 3200
0.56 V
0.07 0.3 V
0.8 1.2 V
250 MHz
3 pF
0.13 ns
0.72 ns
1.22 ns
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Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 2SC3624.PDF ] |
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