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PDF C3665 Data sheet ( Hoja de datos )
| Número de pieza | C3665 | |
| Descripción | NPN Transistor - 2SC3665 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3665
Audio Power Amplifier Applications
Driver-Stage Amplifier Applications
2SC3665
Unit: mm
• Complementary to 2SA1425.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
120
120
5
800
80
1000
150
−55 to 150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
V (BR) CEO
VCB = 120 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
V (BR) EBO IE = 1 mA, IC = 0
hFE
(Note)
VCE = 5 V, IC = 100 mA
VCE (sat)
VBE
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 500 mA
fT VCE = 5 V, IC = 100 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
C3665
Part No. (or abbreviation code)
Characteristics
indicator
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Min Typ. Max Unit
― ― 100 nA
― ― 100 nA
120 ―
―
V
5 ―― V
80 ― 240
― ― 1.0 V
― ― 1.0 V
― 120 ― MHz
― ― 30 pF
2004-07-07
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C3665.PDF ] | |
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